Samsung has announced the launch of the world's first solid-state drive to use toggle-mode DDR NAND flash memory, which the company claims can significantly boost performance.

The company's latest SSD is a 512GB monster based around 32Gb chips manufactured on a 30nm process. They were first produced en masse in only November last year, and the specifications speak for themselves: while the device is somewhat hampered by a 3Gb/s SATA bus - unlike the devices due from SandForce later this year - the toggle-mode SSD is capable of 250MB/s sequential read speed and 220MB/s sequential write speed.

According to the company, the new toggle-mode memory improves performance without increased power consumption: the device uses the same energy as Samsung's previous 40nm 16Gb-based 256GB SSD.

Interestingly, the company also makes the claim that a new controller which can analyse "the frequency of use and preference of the user to automatically activate a low-power mode" during periods of downtime is capable of dropping the power requirements so much it can "extend a notebook's battery life for an hour or more."

Everything else you would expect from a modern SSD makes an appearance, including 256-bit AES encryption on-board and support for Intel's TRIM management function for enhanced performance and reliability.

Executive vice president of the company's memory marketing section Dong-Soo Jun claims that "early introduction of this state-of-the-art toggle[-mode] DDR solution will enable Samsung to play a major role in securing faster market acceptance of the new wave of high-end SSD technology."

Samsung is looking to begin volume production of the new 512GB SSD some time next month, although a firm launch date has yet to be announced - and pricing information has been conspicuous in its absence.

Are you impressed with Samsung's figures, or will you need to see independent verification before you laud the company's toggle-mode DDR technology as the way forward for SSDs? Share your thoughts over in the forums.
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