AMD, IBM develop 45nm high-k metal gate transistor

Author: Richard Swinburne
Published: 30th July 2007
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Close up gate shots taken with an electron microscope. Very tiny indeed.

Close up gate shots taken with an electron microscope. Very tiny indeed.

AMD and IBM have joined forces to make something Intel announced six months ago: high-k metal gate transistor technology for their jointly developed 45nm process.

Intel does have the edge with its Halfnium-Oxide based insulator whereas the AMD-IBM combo will continue to use strained silicon technology.

Their 45nm process is highlighted to have a lower current leakage and higher capacitance of transistors, for a lower power usage and improved performance.

Interestingly it's only planned for second generation 45nm and the first generation 32nm technology processes. Therefore, it seems like AMD's Shanghai core - its first 45nm core, coming next year - will still use traditional manufacturing technologies.

This means Intel will be 12-18 months ahead at least, when it comes to the introduction of its 45nm technology with similar high-k metal gate technology used for its Penryn family of processors later this year.

When will the size reduction end: can we still achieve 25nm and below come 2010 onwards? Your thoughts are always welcome in the bit-tech community forums.


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AMD, IBM develop 45nm high-k metal gate transistor

Intel isn't the only one to sport high-k metal gate transistors: AMD and IBM have joined forces to develop their own high-k 45nm process.

http://www.bit-tech.net/news/2007/07/30/amd_and_ibm_also_have_high-k_metal_gate_45nm/1


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